原始版本

This commit is contained in:
冯佳
2025-06-19 21:56:46 +08:00
parent fe98e5f010
commit a4841450cf
4152 changed files with 1910684 additions and 0 deletions

View File

@ -0,0 +1,31 @@
/*
* Copyright (c) 2006-2023, RT-Thread Development Team
*
* SPDX-License-Identifier: Apache-2.0
*
* Change Logs:
* Date Author Notes
* 2018-12-5 SummerGift first version
*/
#ifndef __DRV_FLASH_H__
#define __DRV_FLASH_H__
#include <rtthread.h>
#include "rtdevice.h"
#include <rthw.h>
#include <drv_common.h>
#ifdef __cplusplus
extern "C" {
#endif
int stm32_flash_read(rt_uint32_t addr, rt_uint8_t *buf, size_t size);
int stm32_flash_write(rt_uint32_t addr, const rt_uint8_t *buf, size_t size);
int stm32_flash_erase(rt_uint32_t addr, size_t size);
#ifdef __cplusplus
}
#endif
#endif /* __DRV_FLASH_H__ */

View File

@ -0,0 +1,199 @@
/*
* Copyright (c) 2006-2023, RT-Thread Development Team
*
* SPDX-License-Identifier: Apache-2.0
*
* Change Logs:
* Date Author Notes
* 2018-12-22 zylx first version
*/
#include <rtconfig.h>
#include <rtdef.h>
#ifdef BSP_USING_ON_CHIP_FLASH
#include "drv_config.h"
#include "drv_flash.h"
#include <board.h>
#if defined(RT_USING_FAL)
#include "fal.h"
#endif
//#define DRV_DEBUG
#define LOG_TAG "drv.flash"
#include <drv_log.h>
/**
* @brief Gets the page of a given address
* @param Addr: Address of the FLASH Memory
* @retval The page of a given address
*/
static uint32_t GetPage(uint32_t addr)
{
uint32_t page = 0;
page = RT_ALIGN_DOWN(addr, FLASH_PAGE_SIZE);
return page;
}
/**
* Read data from flash.
* @note This operation's units is word.
*
* @param addr flash address
* @param buf buffer to store read data
* @param size read bytes size
*
* @return result
*/
int stm32_flash_read(rt_uint32_t addr, rt_uint8_t *buf, size_t size)
{
size_t i;
if ((addr + size) > STM32_FLASH_END_ADDRESS)
{
LOG_E("read outrange flash size! addr is (0x%p)", (void *)(addr + size));
return -RT_EINVAL;
}
for (i = 0; i < size; i++, buf++, addr++)
{
*buf = *(rt_uint8_t *) addr;
}
return size;
}
/**
* Write data to flash.
* @note This operation's units is word.
* @note This operation must after erase. @see flash_erase.
*
* @param addr flash address
* @param buf the write data buffer
* @param size write bytes size
*
* @return result
*/
int stm32_flash_write(rt_uint32_t addr, const rt_uint8_t *buf, size_t size)
{
rt_err_t result = RT_EOK;
rt_uint32_t end_addr = addr + size;
if (addr % 4 != 0)
{
LOG_E("write addr must be 4-byte alignment");
return -RT_EINVAL;
}
if ((end_addr) > STM32_FLASH_END_ADDRESS)
{
LOG_E("write outrange flash size! addr is (0x%p)", (void *)(addr + size));
return -RT_EINVAL;
}
HAL_FLASH_Unlock();
while (addr < end_addr)
{
if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_WORD, addr, *((rt_uint32_t *)buf)) == HAL_OK)
{
if (*(rt_uint32_t *)addr != *(rt_uint32_t *)buf)
{
result = -RT_ERROR;
break;
}
addr += 4;
buf += 4;
}
else
{
result = -RT_ERROR;
break;
}
}
HAL_FLASH_Lock();
if (result != RT_EOK)
{
return result;
}
return size;
}
/**
* Erase data on flash.
* @note This operation is irreversible.
* @note This operation's units is different which on many chips.
*
* @param addr flash address
* @param size erase bytes size
*
* @return result
*/
int stm32_flash_erase(rt_uint32_t addr, size_t size)
{
rt_err_t result = RT_EOK;
uint32_t PAGEError = 0;
/*Variable used for Erase procedure*/
FLASH_EraseInitTypeDef EraseInitStruct;
if ((addr + size) > STM32_FLASH_END_ADDRESS)
{
LOG_E("ERROR: erase outrange flash size! addr is (0x%p)\n", (void *)(addr + size));
return -RT_EINVAL;
}
HAL_FLASH_Unlock();
/* Fill EraseInit structure*/
EraseInitStruct.TypeErase = FLASH_TYPEERASE_PAGES;
EraseInitStruct.PageAddress = GetPage(addr);
EraseInitStruct.NbPages = (size + FLASH_PAGE_SIZE - 1) / FLASH_PAGE_SIZE;
if (HAL_FLASHEx_Erase(&EraseInitStruct, &PAGEError) != HAL_OK)
{
result = -RT_ERROR;
goto __exit;
}
__exit:
HAL_FLASH_Lock();
if (result != RT_EOK)
{
return result;
}
LOG_D("erase done: addr (0x%p), size %d", (void *)addr, size);
return size;
}
#if defined(RT_USING_FAL)
static int fal_flash_read(long offset, rt_uint8_t *buf, size_t size);
static int fal_flash_write(long offset, const rt_uint8_t *buf, size_t size);
static int fal_flash_erase(long offset, size_t size);
const struct fal_flash_dev stm32_onchip_flash = { "onchip_flash", STM32_FLASH_START_ADRESS, STM32_FLASH_SIZE, FLASH_PAGE_SIZE, {NULL, fal_flash_read, fal_flash_write, fal_flash_erase} };
static int fal_flash_read(long offset, rt_uint8_t *buf, size_t size)
{
return stm32_flash_read(stm32_onchip_flash.addr + offset, buf, size);
}
static int fal_flash_write(long offset, const rt_uint8_t *buf, size_t size)
{
return stm32_flash_write(stm32_onchip_flash.addr + offset, buf, size);
}
static int fal_flash_erase(long offset, size_t size)
{
return stm32_flash_erase(stm32_onchip_flash.addr + offset, size);
}
#endif
#endif /* BSP_USING_ON_CHIP_FLASH */

View File

@ -0,0 +1,275 @@
/*
* Copyright (c) 2006-2023, RT-Thread Development Team
*
* SPDX-License-Identifier: Apache-2.0
*
* Change Logs:
* Date Author Notes
* 2018-12-5 SummerGift first version
* 2020-03-05 redoc support stm32f103vg
*
*/
#include <rtconfig.h>
#include <rtdef.h>
#ifdef BSP_USING_ON_CHIP_FLASH
#include "drv_config.h"
#include "drv_flash.h"
#include <board.h>
#if defined(RT_USING_FAL)
#include "fal.h"
#endif
//#define DRV_DEBUG
#define LOG_TAG "drv.flash"
#include <drv_log.h>
/**
* @brief Gets the page of a given address
* @param Addr: Address of the FLASH Memory
* @retval The page of a given address
*/
static uint32_t GetPage(uint32_t addr)
{
uint32_t page = 0;
page = RT_ALIGN_DOWN(addr, FLASH_PAGE_SIZE);
return page;
}
/**
* Read data from flash.
* @note This operation's units is word.
*
* @param addr flash address
* @param buf buffer to store read data
* @param size read bytes size
*
* @return result
*/
int stm32_flash_read(rt_uint32_t addr, rt_uint8_t *buf, size_t size)
{
size_t i;
if ((addr + size) > STM32_FLASH_END_ADDRESS)
{
LOG_E("read outrange flash size! addr is (0x%p)", (void *)(addr + size));
return -RT_EINVAL;
}
for (i = 0; i < size; i++, buf++, addr++)
{
*buf = *(rt_uint8_t *) addr;
}
return size;
}
/**
* Write data to flash.
* @note This operation's units is word.
* @note This operation must after erase. @see flash_erase.
*
* @param addr flash address
* @param buf the write data buffer
* @param size write bytes size
*
* @return result
*/
int stm32_flash_write(rt_uint32_t addr, const rt_uint8_t *buf, size_t size)
{
rt_err_t result = RT_EOK;
rt_uint32_t end_addr = addr + size;
if (addr % 4 != 0)
{
LOG_E("write addr must be 4-byte alignment");
return -RT_EINVAL;
}
if ((end_addr) > STM32_FLASH_END_ADDRESS)
{
LOG_E("write outrange flash size! addr is (0x%p)", (void *)(addr + size));
return -RT_EINVAL;
}
HAL_FLASH_Unlock();
while (addr < end_addr)
{
if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_WORD, addr, *((rt_uint32_t *)buf)) == HAL_OK)
{
if (*(rt_uint32_t *)addr != *(rt_uint32_t *)buf)
{
result = -RT_ERROR;
break;
}
addr += 4;
buf += 4;
}
else
{
result = -RT_ERROR;
break;
}
}
HAL_FLASH_Lock();
if (result != RT_EOK)
{
return result;
}
return size;
}
/**
* Erase data on flash with bank.
* @note This operation is irreversible.
* @note This operation's units is different which on many chips.
*
* @param bank flash bank
* @param addr flash address
* @param size erase bytes size
*
* @return result
*/
int stm32_flash_erase_bank(uint32_t bank, rt_uint32_t addr, size_t size)
{
rt_err_t result = RT_EOK;
uint32_t PAGEError = 0;
/*Variable used for Erase procedure*/
FLASH_EraseInitTypeDef EraseInitStruct;
if ((addr + size) > STM32_FLASH_END_ADDRESS)
{
LOG_E("ERROR: erase outrange flash size! addr is (0x%p)\n", (void *)(addr + size));
return -RT_EINVAL;
}
HAL_FLASH_Unlock();
/* Fill EraseInit structure*/
EraseInitStruct.TypeErase = FLASH_TYPEERASE_PAGES;
EraseInitStruct.PageAddress = GetPage(addr);
EraseInitStruct.NbPages = (size + FLASH_PAGE_SIZE - 1) / FLASH_PAGE_SIZE;
EraseInitStruct.Banks = bank;
if (HAL_FLASHEx_Erase(&EraseInitStruct, &PAGEError) != HAL_OK)
{
result = -RT_ERROR;
goto __exit;
}
__exit:
HAL_FLASH_Lock();
if (result != RT_EOK)
{
return result;
}
LOG_D("erase done: addr (0x%p), size %d", (void *)addr, size);
return size;
}
/**
* Erase data on flash .
* @note This operation is irreversible.
* @note This operation's units is different which on many chips.
*
* @param addr flash address
* @param size erase bytes size
*
* @return result
*/
int stm32_flash_erase(rt_uint32_t addr, size_t size)
{
#if defined(FLASH_BANK2_END)
rt_err_t result = RT_EOK;
rt_uint32_t addr_bank1 = 0;
rt_uint32_t size_bank1 = 0;
rt_uint32_t addr_bank2 = 0;
rt_uint32_t size_bank2 = 0;
if((addr + size) <= FLASH_BANK1_END)
{
addr_bank1 = addr;
size_bank1 = size;
size_bank2 = 0;
}
else if(addr > FLASH_BANK1_END)
{
size_bank1 = 0;
addr_bank2 = addr;
size_bank2 = size;
}
else
{
addr_bank1 = addr;
size_bank1 = FLASH_BANK1_END + 1 - addr_bank1;
addr_bank2 = FLASH_BANK1_END + 1;
size_bank2 = addr + size - (FLASH_BANK1_END + 1);
}
if(size_bank1)
{
LOG_D("bank1: addr (0x%p), size %d", (void *)addr_bank1, size_bank1);
if(size_bank1 != stm32_flash_erase_bank(FLASH_BANK_1, addr_bank1, size_bank1))
{
result = -RT_ERROR;
goto __exit;
}
}
if(size_bank2)
{
LOG_D("bank2: addr (0x%p), size %d", (void *)addr_bank2, size_bank2);
if(size_bank2 != stm32_flash_erase_bank(FLASH_BANK_2, addr_bank2, size_bank2))
{
result = -RT_ERROR;
goto __exit;
}
}
__exit:
if(result != RT_EOK)
{
return result;
}
return size_bank1 + size_bank2;
#else
return stm32_flash_erase_bank(FLASH_BANK_1, addr, size);
#endif
}
#if defined(RT_USING_FAL)
static int fal_flash_read(long offset, rt_uint8_t *buf, size_t size);
static int fal_flash_write(long offset, const rt_uint8_t *buf, size_t size);
static int fal_flash_erase(long offset, size_t size);
const struct fal_flash_dev stm32_onchip_flash = { "onchip_flash", STM32_FLASH_START_ADRESS, STM32_FLASH_SIZE, FLASH_PAGE_SIZE, {NULL, fal_flash_read, fal_flash_write, fal_flash_erase} };
static int fal_flash_read(long offset, rt_uint8_t *buf, size_t size)
{
return stm32_flash_read(stm32_onchip_flash.addr + offset, buf, size);
}
static int fal_flash_write(long offset, const rt_uint8_t *buf, size_t size)
{
return stm32_flash_write(stm32_onchip_flash.addr + offset, buf, size);
}
static int fal_flash_erase(long offset, size_t size)
{
return stm32_flash_erase(stm32_onchip_flash.addr + offset, size);
}
#endif
#endif /* BSP_USING_ON_CHIP_FLASH */

View File

@ -0,0 +1,314 @@
/*
* Copyright (c) 2006-2023, RT-Thread Development Team
*
* SPDX-License-Identifier: Apache-2.0
*
* Change Logs:
* Date Author Notes
* 2018-12-5 SummerGift first version
*/
#include <rtconfig.h>
#include <rtdef.h>
#ifdef BSP_USING_ON_CHIP_FLASH
#include "drv_config.h"
#include "drv_flash.h"
#include <board.h>
#if defined(RT_USING_FAL)
#include "fal.h"
#endif
//#define DRV_DEBUG
#define LOG_TAG "drv.flash"
#include <drv_log.h>
/* Base address of the Flash sectors Bank 1 */
#define ADDR_FLASH_SECTOR_0 ((uint32_t)0x08000000) /* Base @ of Sector 0, 16 Kbytes */
#define ADDR_FLASH_SECTOR_1 ((uint32_t)0x08004000) /* Base @ of Sector 1, 16 Kbytes */
#define ADDR_FLASH_SECTOR_2 ((uint32_t)0x08008000) /* Base @ of Sector 2, 16 Kbytes */
#define ADDR_FLASH_SECTOR_3 ((uint32_t)0x0800C000) /* Base @ of Sector 3, 16 Kbytes */
#define ADDR_FLASH_SECTOR_4 ((uint32_t)0x08010000) /* Base @ of Sector 4, 64 Kbytes */
#define ADDR_FLASH_SECTOR_5 ((uint32_t)0x08020000) /* Base @ of Sector 5, 128 Kbytes */
#define ADDR_FLASH_SECTOR_6 ((uint32_t)0x08040000) /* Base @ of Sector 6, 128 Kbytes */
#define ADDR_FLASH_SECTOR_7 ((uint32_t)0x08060000) /* Base @ of Sector 7, 128 Kbytes */
#define ADDR_FLASH_SECTOR_8 ((uint32_t)0x08080000) /* Base @ of Sector 8, 128 Kbytes */
#define ADDR_FLASH_SECTOR_9 ((uint32_t)0x080A0000) /* Base @ of Sector 9, 128 Kbytes */
#define ADDR_FLASH_SECTOR_10 ((uint32_t)0x080C0000) /* Base @ of Sector 10, 128 Kbytes */
#define ADDR_FLASH_SECTOR_11 ((uint32_t)0x080E0000) /* Base @ of Sector 11, 128 Kbytes */
/**
* @brief Gets the sector of a given address
* @param None
* @retval The sector of a given address
*/
static rt_uint32_t GetSector(rt_uint32_t Address)
{
rt_uint32_t sector = 0;
if((Address < ADDR_FLASH_SECTOR_1) && (Address >= ADDR_FLASH_SECTOR_0))
{
sector = FLASH_SECTOR_0;
}
else if((Address < ADDR_FLASH_SECTOR_2) && (Address >= ADDR_FLASH_SECTOR_1))
{
sector = FLASH_SECTOR_1;
}
else if((Address < ADDR_FLASH_SECTOR_3) && (Address >= ADDR_FLASH_SECTOR_2))
{
sector = FLASH_SECTOR_2;
}
else if((Address < ADDR_FLASH_SECTOR_4) && (Address >= ADDR_FLASH_SECTOR_3))
{
sector = FLASH_SECTOR_3;
}
else if((Address < ADDR_FLASH_SECTOR_5) && (Address >= ADDR_FLASH_SECTOR_4))
{
sector = FLASH_SECTOR_4;
}
else if((Address < ADDR_FLASH_SECTOR_6) && (Address >= ADDR_FLASH_SECTOR_5))
{
sector = FLASH_SECTOR_5;
}
else if((Address < ADDR_FLASH_SECTOR_7) && (Address >= ADDR_FLASH_SECTOR_6))
{
sector = FLASH_SECTOR_6;
}
else if((Address < ADDR_FLASH_SECTOR_8) && (Address >= ADDR_FLASH_SECTOR_7))
{
sector = FLASH_SECTOR_7;
}
#if defined(FLASH_SECTOR_8)
else if((Address < ADDR_FLASH_SECTOR_9) && (Address >= ADDR_FLASH_SECTOR_8))
{
sector = FLASH_SECTOR_8;
}
#endif
#if defined(FLASH_SECTOR_9)
else if((Address < ADDR_FLASH_SECTOR_10) && (Address >= ADDR_FLASH_SECTOR_9))
{
sector = FLASH_SECTOR_9;
}
#endif
#if defined(FLASH_SECTOR_10)
else if((Address < ADDR_FLASH_SECTOR_11) && (Address >= ADDR_FLASH_SECTOR_10))
{
sector = FLASH_SECTOR_10;
}
#endif
#if defined(FLASH_SECTOR_11)
else /* (Address < FLASH_END_ADDR) && (Address >= ADDR_FLASH_SECTOR_11) */
{
sector = FLASH_SECTOR_11;
}
#endif
return sector;
}
/**
* Read data from flash.
* @note This operation's units is word.
*
* @param addr flash address
* @param buf buffer to store read data
* @param size read bytes size
*
* @return result
*/
int stm32_flash_read(rt_uint32_t addr, rt_uint8_t *buf, size_t size)
{
size_t i;
if ((addr + size) > STM32_FLASH_END_ADDRESS)
{
LOG_E("read outrange flash size! addr is (0x%p)", (void*)(addr + size));
return -1;
}
for (i = 0; i < size; i++, buf++, addr++)
{
*buf = *(rt_uint8_t *) addr;
}
return size;
}
/**
* Write data to flash.
* @note This operation's units is word.
* @note This operation must after erase. @see flash_erase.
*
* @param addr flash address
* @param buf the write data buffer
* @param size write bytes size
*
* @return result
*/
int stm32_flash_write(rt_uint32_t addr, const rt_uint8_t *buf, size_t size)
{
rt_err_t result = RT_EOK;
rt_uint32_t end_addr = addr + size;
if ((end_addr) > STM32_FLASH_END_ADDRESS)
{
LOG_E("write outrange flash size! addr is (0x%p)", (void*)(addr + size));
return -RT_EINVAL;
}
if (size < 1)
{
return -RT_EINVAL;
}
HAL_FLASH_Unlock();
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR | FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR | FLASH_FLAG_PGSERR);
for (size_t i = 0; i < size; i++, addr++, buf++)
{
/* write data to flash */
if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_BYTE, addr, (rt_uint64_t)(*buf)) == HAL_OK)
{
if (*(rt_uint8_t *)addr != *buf)
{
result = -RT_ERROR;
break;
}
}
else
{
result = -RT_ERROR;
break;
}
}
HAL_FLASH_Lock();
if (result != RT_EOK)
{
return result;
}
return size;
}
/**
* Erase data on flash.
* @note This operation is irreversible.
* @note This operation's units is different which on many chips.
*
* @param addr flash address
* @param size erase bytes size
*
* @return result
*/
int stm32_flash_erase(rt_uint32_t addr, size_t size)
{
rt_err_t result = RT_EOK;
rt_uint32_t FirstSector = 0, NbOfSectors = 0;
rt_uint32_t SECTORError = 0;
if ((addr + size) > STM32_FLASH_END_ADDRESS)
{
LOG_E("ERROR: erase outrange flash size! addr is (0x%p)\n", (void*)(addr + size));
return -RT_EINVAL;
}
/*Variable used for Erase procedure*/
FLASH_EraseInitTypeDef EraseInitStruct;
/* Unlock the Flash to enable the flash control register access */
HAL_FLASH_Unlock();
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR | FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR | FLASH_FLAG_PGSERR);
/* Get the 1st sector to erase */
FirstSector = GetSector(addr);
/* Get the number of sector to erase from 1st sector*/
NbOfSectors = GetSector(addr + size - 1) - FirstSector + 1;
/* Fill EraseInit structure*/
EraseInitStruct.TypeErase = FLASH_TYPEERASE_SECTORS;
EraseInitStruct.VoltageRange = FLASH_VOLTAGE_RANGE_3;
EraseInitStruct.Sector = FirstSector;
EraseInitStruct.NbSectors = NbOfSectors;
if (HAL_FLASHEx_Erase(&EraseInitStruct, (uint32_t *)&SECTORError) != HAL_OK)
{
result = -RT_ERROR;
goto __exit;
}
__exit:
HAL_FLASH_Lock();
if (result != RT_EOK)
{
return result;
}
LOG_D("erase done: addr (0x%p), size %d", (void*)addr, size);
return result;
}
#if defined(RT_USING_FAL)
static int fal_flash_read_16k(long offset, rt_uint8_t *buf, size_t size);
static int fal_flash_read_64k(long offset, rt_uint8_t *buf, size_t size);
static int fal_flash_read_128k(long offset, rt_uint8_t *buf, size_t size);
static int fal_flash_write_16k(long offset, const rt_uint8_t *buf, size_t size);
static int fal_flash_write_64k(long offset, const rt_uint8_t *buf, size_t size);
static int fal_flash_write_128k(long offset, const rt_uint8_t *buf, size_t size);
static int fal_flash_erase_16k(long offset, size_t size);
static int fal_flash_erase_64k(long offset, size_t size);
static int fal_flash_erase_128k(long offset, size_t size);
const struct fal_flash_dev stm32_onchip_flash_16k = { "onchip_flash_16k", STM32_FLASH_START_ADRESS_16K, FLASH_SIZE_GRANULARITY_16K, (16 * 1024), {NULL, fal_flash_read_16k, fal_flash_write_16k, fal_flash_erase_16k} };
const struct fal_flash_dev stm32_onchip_flash_64k = { "onchip_flash_64k", STM32_FLASH_START_ADRESS_64K, FLASH_SIZE_GRANULARITY_64K, (64 * 1024), {NULL, fal_flash_read_64k, fal_flash_write_64k, fal_flash_erase_64k} };
const struct fal_flash_dev stm32_onchip_flash_128k = { "onchip_flash_128k", STM32_FLASH_START_ADRESS_128K, FLASH_SIZE_GRANULARITY_128K, (128 * 1024), {NULL, fal_flash_read_128k, fal_flash_write_128k, fal_flash_erase_128k} };
static int fal_flash_read_16k(long offset, rt_uint8_t *buf, size_t size)
{
return stm32_flash_read(stm32_onchip_flash_16k.addr + offset, buf, size);
}
static int fal_flash_read_64k(long offset, rt_uint8_t *buf, size_t size)
{
return stm32_flash_read(stm32_onchip_flash_64k.addr + offset, buf, size);
}
static int fal_flash_read_128k(long offset, rt_uint8_t *buf, size_t size)
{
return stm32_flash_read(stm32_onchip_flash_128k.addr + offset, buf, size);
}
static int fal_flash_write_16k(long offset, const rt_uint8_t *buf, size_t size)
{
return stm32_flash_write(stm32_onchip_flash_16k.addr + offset, buf, size);
}
static int fal_flash_write_64k(long offset, const rt_uint8_t *buf, size_t size)
{
return stm32_flash_write(stm32_onchip_flash_64k.addr + offset, buf, size);
}
static int fal_flash_write_128k(long offset, const rt_uint8_t *buf, size_t size)
{
return stm32_flash_write(stm32_onchip_flash_128k.addr + offset, buf, size);
}
static int fal_flash_erase_16k(long offset, size_t size)
{
return stm32_flash_erase(stm32_onchip_flash_16k.addr + offset, size);
}
static int fal_flash_erase_64k(long offset, size_t size)
{
return stm32_flash_erase(stm32_onchip_flash_64k.addr + offset, size);
}
static int fal_flash_erase_128k(long offset, size_t size)
{
return stm32_flash_erase(stm32_onchip_flash_128k.addr + offset, size);
}
#endif
#endif /* BSP_USING_ON_CHIP_FLASH */

View File

@ -0,0 +1,464 @@
/*
* Copyright (c) 2006-2023, RT-Thread Development Team
*
* SPDX-License-Identifier: Apache-2.0
*
* Change Logs:
* Date Author Notes
* 2018-12-5 SummerGift first version
*/
#include <rtconfig.h>
#include <rtdef.h>
#ifdef BSP_USING_ON_CHIP_FLASH
#include "drv_config.h"
#include "drv_flash.h"
#include <board.h>
#if defined(RT_USING_FAL)
#include "fal.h"
#endif
//#define DRV_DEBUG
#define LOG_TAG "drv.flash"
#include <drv_log.h>
/* Base address of the Flash sectors Bank 1 */
#define ADDR_FLASH_SECTOR_0 ((uint32_t)0x08000000) /* Base @ of Sector 0, 16 Kbytes */
#define ADDR_FLASH_SECTOR_1 ((uint32_t)0x08004000) /* Base @ of Sector 1, 16 Kbytes */
#define ADDR_FLASH_SECTOR_2 ((uint32_t)0x08008000) /* Base @ of Sector 2, 16 Kbytes */
#define ADDR_FLASH_SECTOR_3 ((uint32_t)0x0800C000) /* Base @ of Sector 3, 16 Kbytes */
#define ADDR_FLASH_SECTOR_4 ((uint32_t)0x08010000) /* Base @ of Sector 4, 64 Kbytes */
#define ADDR_FLASH_SECTOR_5 ((uint32_t)0x08020000) /* Base @ of Sector 5, 128 Kbytes */
#define ADDR_FLASH_SECTOR_6 ((uint32_t)0x08040000) /* Base @ of Sector 6, 128 Kbytes */
#define ADDR_FLASH_SECTOR_7 ((uint32_t)0x08060000) /* Base @ of Sector 7, 128 Kbytes */
#define ADDR_FLASH_SECTOR_8 ((uint32_t)0x08080000) /* Base @ of Sector 8, 128 Kbytes */
#define ADDR_FLASH_SECTOR_9 ((uint32_t)0x080A0000) /* Base @ of Sector 9, 128 Kbytes */
#define ADDR_FLASH_SECTOR_10 ((uint32_t)0x080C0000) /* Base @ of Sector 10, 128 Kbytes */
#define ADDR_FLASH_SECTOR_11 ((uint32_t)0x080E0000) /* Base @ of Sector 11, 128 Kbytes */
/* Base address of the Flash sectors Bank 2 */
#define ADDR_FLASH_SECTOR_12 ((uint32_t)0x08100000) /* Base @ of Sector 0, 16 Kbytes */
#define ADDR_FLASH_SECTOR_13 ((uint32_t)0x08104000) /* Base @ of Sector 1, 16 Kbytes */
#define ADDR_FLASH_SECTOR_14 ((uint32_t)0x08108000) /* Base @ of Sector 2, 16 Kbytes */
#define ADDR_FLASH_SECTOR_15 ((uint32_t)0x0810C000) /* Base @ of Sector 3, 16 Kbytes */
#define ADDR_FLASH_SECTOR_16 ((uint32_t)0x08110000) /* Base @ of Sector 4, 64 Kbytes */
#define ADDR_FLASH_SECTOR_17 ((uint32_t)0x08120000) /* Base @ of Sector 5, 128 Kbytes */
#define ADDR_FLASH_SECTOR_18 ((uint32_t)0x08140000) /* Base @ of Sector 6, 128 Kbytes */
#define ADDR_FLASH_SECTOR_19 ((uint32_t)0x08160000) /* Base @ of Sector 7, 128 Kbytes */
#define ADDR_FLASH_SECTOR_20 ((uint32_t)0x08180000) /* Base @ of Sector 8, 128 Kbytes */
#define ADDR_FLASH_SECTOR_21 ((uint32_t)0x081A0000) /* Base @ of Sector 9, 128 Kbytes */
#define ADDR_FLASH_SECTOR_22 ((uint32_t)0x081C0000) /* Base @ of Sector 10, 128 Kbytes */
#define ADDR_FLASH_SECTOR_23 ((uint32_t)0x081E0000) /* Base @ of Sector 11, 128 Kbytes */
/**
* @brief Gets the sector of a given address
* @param None
* @retval The sector of a given address
*/
static rt_uint32_t GetSector(rt_uint32_t Address)
{
rt_uint32_t sector = 0;
if((Address < ADDR_FLASH_SECTOR_1) && (Address >= ADDR_FLASH_SECTOR_0))
{
sector = FLASH_SECTOR_0;
}
else if((Address < ADDR_FLASH_SECTOR_2) && (Address >= ADDR_FLASH_SECTOR_1))
{
sector = FLASH_SECTOR_1;
}
else if((Address < ADDR_FLASH_SECTOR_3) && (Address >= ADDR_FLASH_SECTOR_2))
{
sector = FLASH_SECTOR_2;
}
else if((Address < ADDR_FLASH_SECTOR_4) && (Address >= ADDR_FLASH_SECTOR_3))
{
sector = FLASH_SECTOR_3;
}
else if((Address < ADDR_FLASH_SECTOR_5) && (Address >= ADDR_FLASH_SECTOR_4))
{
sector = FLASH_SECTOR_4;
}
else if((Address < ADDR_FLASH_SECTOR_6) && (Address >= ADDR_FLASH_SECTOR_5))
{
sector = FLASH_SECTOR_5;
}
else if((Address < ADDR_FLASH_SECTOR_7) && (Address >= ADDR_FLASH_SECTOR_6))
{
sector = FLASH_SECTOR_6;
}
else if((Address < ADDR_FLASH_SECTOR_8) && (Address >= ADDR_FLASH_SECTOR_7))
{
sector = FLASH_SECTOR_7;
}
#if defined(FLASH_SECTOR_8)
else if((Address < ADDR_FLASH_SECTOR_9) && (Address >= ADDR_FLASH_SECTOR_8))
{
sector = FLASH_SECTOR_8;
}
#endif
#if defined(FLASH_SECTOR_9)
else if((Address < ADDR_FLASH_SECTOR_10) && (Address >= ADDR_FLASH_SECTOR_9))
{
sector = FLASH_SECTOR_9;
}
#endif
#if defined(FLASH_SECTOR_10)
else if((Address < ADDR_FLASH_SECTOR_11) && (Address >= ADDR_FLASH_SECTOR_10))
{
sector = FLASH_SECTOR_10;
}
#endif
#if defined(FLASH_SECTOR_11)
else if((Address < ADDR_FLASH_SECTOR_12) && (Address >= ADDR_FLASH_SECTOR_11))
{
sector = FLASH_SECTOR_11;
}
#endif
#if defined(STM32F427xx) || defined(STM32F437xx) || defined(STM32F429xx)|| defined(STM32F439xx) || defined(STM32F469xx) || defined(STM32F479xx)
else if((Address < ADDR_FLASH_SECTOR_13) && (Address >= ADDR_FLASH_SECTOR_12))
{
sector = FLASH_SECTOR_12;
}
else if((Address < ADDR_FLASH_SECTOR_14) && (Address >= ADDR_FLASH_SECTOR_13))
{
sector = FLASH_SECTOR_13;
}
else if((Address < ADDR_FLASH_SECTOR_15) && (Address >= ADDR_FLASH_SECTOR_14))
{
sector = FLASH_SECTOR_14;
}
else if((Address < ADDR_FLASH_SECTOR_16) && (Address >= ADDR_FLASH_SECTOR_15))
{
sector = FLASH_SECTOR_15;
}
else if((Address < ADDR_FLASH_SECTOR_17) && (Address >= ADDR_FLASH_SECTOR_16))
{
sector = FLASH_SECTOR_16;
}
else if((Address < ADDR_FLASH_SECTOR_18) && (Address >= ADDR_FLASH_SECTOR_17))
{
sector = FLASH_SECTOR_17;
}
else if((Address < ADDR_FLASH_SECTOR_19) && (Address >= ADDR_FLASH_SECTOR_18))
{
sector = FLASH_SECTOR_18;
}
else if((Address < ADDR_FLASH_SECTOR_20) && (Address >= ADDR_FLASH_SECTOR_19))
{
sector = FLASH_SECTOR_19;
}
else if((Address < ADDR_FLASH_SECTOR_21) && (Address >= ADDR_FLASH_SECTOR_20))
{
sector = FLASH_SECTOR_20;
}
else if((Address < ADDR_FLASH_SECTOR_22) && (Address >= ADDR_FLASH_SECTOR_21))
{
sector = FLASH_SECTOR_21;
}
else if((Address < ADDR_FLASH_SECTOR_23) && (Address >= ADDR_FLASH_SECTOR_22))
{
sector = FLASH_SECTOR_22;
}
else /* (Address < FLASH_END_ADDR) && (Address >= ADDR_FLASH_SECTOR_23) */
{
sector = FLASH_SECTOR_23;
}
#endif
return sector;
}
/**
* Read data from flash.
* @note This operation's units is word.
*
* @param addr flash address
* @param buf buffer to store read data
* @param size read bytes size
*
* @return result
*/
int stm32_flash_read(rt_uint32_t addr, rt_uint8_t *buf, size_t size)
{
size_t i;
if ((addr + size) > STM32_FLASH_END_ADDRESS)
{
LOG_E("read outrange flash size! addr is (0x%p)", (void*)(addr + size));
return -1;
}
for (i = 0; i < size; i++, buf++, addr++)
{
*buf = *(rt_uint8_t *) addr;
}
return size;
}
/**
* Write data to flash.
* @note This operation's units is word.
* @note This operation must after erase. @see flash_erase.
*
* @param addr flash address
* @param buf the write data buffer
* @param size write bytes size
*
* @return result
*/
int stm32_flash_write(rt_uint32_t addr, const rt_uint8_t *buf, size_t size)
{
rt_err_t result = RT_EOK;
rt_uint32_t end_addr = addr + size;
rt_uint32_t written_size = 0;
rt_uint32_t write_size = 0;
if ((end_addr) > STM32_FLASH_END_ADDRESS)
{
LOG_E("write outrange flash size! addr is (0x%p)", (void*)(addr + size));
return -RT_EINVAL;
}
if (size < 1)
{
return -RT_EINVAL;
}
HAL_FLASH_Unlock();
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR | FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR | FLASH_FLAG_PGSERR);
while (written_size < size)
{
if (((addr + written_size) % 4 == 0) && (size - written_size >= 4))
{
if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_WORD, addr + written_size, *((rt_uint32_t *)(buf + written_size))) == HAL_OK)
{
if (*(rt_uint32_t *)(addr + written_size) != *(rt_uint32_t *)(buf + written_size))
{
result = -RT_ERROR;
break;
}
}
else
{
result = -RT_ERROR;
break;
}
write_size = 4;
}
else if (((addr + written_size) % 2 == 0) && (size - written_size >= 2))
{
if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_HALFWORD, addr + written_size, *((rt_uint16_t *)(buf + written_size))) == HAL_OK)
{
if (*(rt_uint16_t *)(addr + written_size) != *(rt_uint16_t *)(buf + written_size))
{
result = -RT_ERROR;
break;
}
}
else
{
result = -RT_ERROR;
break;
}
write_size = 2;
}
else
{
if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_BYTE, addr + written_size, *((rt_uint8_t *)(buf + written_size))) == HAL_OK)
{
if (*(rt_uint8_t *)(addr + written_size) != *(rt_uint8_t *)(buf + written_size))
{
result = -RT_ERROR;
break;
}
}
else
{
result = -RT_ERROR;
break;
}
write_size = 1;
}
written_size += write_size;
}
HAL_FLASH_Lock();
if (result != RT_EOK)
{
return result;
}
return size;
}
/**
* Erase data on flash.
* @note This operation is irreversible.
* @note This operation's units is different which on many chips.
*
* @param addr flash address
* @param size erase bytes size
*
* @return result
*/
int stm32_flash_erase(rt_uint32_t addr, size_t size)
{
rt_err_t result = RT_EOK;
rt_uint32_t FirstSector = 0, NbOfSectors = 0;
rt_uint32_t SECTORError = 0;
if ((addr + size) > STM32_FLASH_END_ADDRESS)
{
LOG_E("ERROR: erase outrange flash size! addr is (0x%p)\n", (void*)(addr + size));
return -RT_EINVAL;
}
if (size < 1)
{
return -RT_EINVAL;
}
/*Variable used for Erase procedure*/
FLASH_EraseInitTypeDef EraseInitStruct;
/* Unlock the Flash to enable the flash control register access */
HAL_FLASH_Unlock();
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR | FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR | FLASH_FLAG_PGSERR);
/* Get the 1st sector to erase */
FirstSector = GetSector(addr);
/* Get the number of sector to erase from 1st sector*/
NbOfSectors = GetSector(addr + size - 1) - FirstSector + 1;
/* Fill EraseInit structure*/
EraseInitStruct.TypeErase = FLASH_TYPEERASE_SECTORS;
EraseInitStruct.VoltageRange = FLASH_VOLTAGE_RANGE_3;
EraseInitStruct.Sector = FirstSector;
EraseInitStruct.NbSectors = NbOfSectors;
if (HAL_FLASHEx_Erase(&EraseInitStruct, (uint32_t *)&SECTORError) != HAL_OK)
{
result = -RT_ERROR;
goto __exit;
}
__exit:
HAL_FLASH_Lock();
if (result != RT_EOK)
{
return result;
}
LOG_D("erase done: addr (0x%p), size %d", (void*)addr, size);
return size;
}
#if defined(RT_USING_FAL)
static int fal_flash_read_16k(long offset, rt_uint8_t *buf, size_t size);
static int fal_flash_read_64k(long offset, rt_uint8_t *buf, size_t size);
static int fal_flash_read_128k(long offset, rt_uint8_t *buf, size_t size);
static int fal_flash_write_16k(long offset, const rt_uint8_t *buf, size_t size);
static int fal_flash_write_64k(long offset, const rt_uint8_t *buf, size_t size);
static int fal_flash_write_128k(long offset, const rt_uint8_t *buf, size_t size);
static int fal_flash_erase_16k(long offset, size_t size);
static int fal_flash_erase_64k(long offset, size_t size);
static int fal_flash_erase_128k(long offset, size_t size);
const struct fal_flash_dev stm32_onchip_flash_16k =
{
"onchip_flash_16k",
STM32_FLASH_START_ADRESS_16K,
FLASH_SIZE_GRANULARITY_16K,
(16 * 1024),
{
NULL,
fal_flash_read_16k,
fal_flash_write_16k,
fal_flash_erase_16k,
},
8,
//{},
};
const struct fal_flash_dev stm32_onchip_flash_64k =
{
"onchip_flash_64k",
STM32_FLASH_START_ADRESS_64K,
FLASH_SIZE_GRANULARITY_64K,
(64 * 1024),
{
NULL,
fal_flash_read_64k,
fal_flash_write_64k,
fal_flash_erase_64k,
},
8,
//{},
};
const struct fal_flash_dev stm32_onchip_flash_128k =
{
"onchip_flash_128k",
STM32_FLASH_START_ADRESS_128K,
FLASH_SIZE_GRANULARITY_128K,
(128 * 1024),
{
NULL,
fal_flash_read_128k,
fal_flash_write_128k,
fal_flash_erase_128k,
},
8,
//{},
};
static int fal_flash_read_16k(long offset, rt_uint8_t *buf, size_t size)
{
return stm32_flash_read(stm32_onchip_flash_16k.addr + offset, buf, size);
}
static int fal_flash_read_64k(long offset, rt_uint8_t *buf, size_t size)
{
return stm32_flash_read(stm32_onchip_flash_64k.addr + offset, buf, size);
}
static int fal_flash_read_128k(long offset, rt_uint8_t *buf, size_t size)
{
return stm32_flash_read(stm32_onchip_flash_128k.addr + offset, buf, size);
}
static int fal_flash_write_16k(long offset, const rt_uint8_t *buf, size_t size)
{
return stm32_flash_write(stm32_onchip_flash_16k.addr + offset, buf, size);
}
static int fal_flash_write_64k(long offset, const rt_uint8_t *buf, size_t size)
{
return stm32_flash_write(stm32_onchip_flash_64k.addr + offset, buf, size);
}
static int fal_flash_write_128k(long offset, const rt_uint8_t *buf, size_t size)
{
return stm32_flash_write(stm32_onchip_flash_128k.addr + offset, buf, size);
}
static int fal_flash_erase_16k(long offset, size_t size)
{
return stm32_flash_erase(stm32_onchip_flash_16k.addr + offset, size);
}
static int fal_flash_erase_64k(long offset, size_t size)
{
return stm32_flash_erase(stm32_onchip_flash_64k.addr + offset, size);
}
static int fal_flash_erase_128k(long offset, size_t size)
{
return stm32_flash_erase(stm32_onchip_flash_128k.addr + offset, size);
}
#endif
#endif /* BSP_USING_ON_CHIP_FLASH */

View File

@ -0,0 +1,377 @@
/*
* Copyright (c) 2006-2023, RT-Thread Development Team
*
* SPDX-License-Identifier: Apache-2.0
*
* Change Logs:
* Date Author Notes
* 2018-12-5 SummerGift first version
* 2019-3-2 jinsheng add Macro judgment
* 2020-1-6 duminmin support single bank mode
* 2021-8-11 CX fix the sector calculation error bug
*/
#include <rtconfig.h>
#include <rtdef.h>
#ifdef BSP_USING_ON_CHIP_FLASH
#include "drv_config.h"
#include "drv_flash.h"
#include <board.h>
#if defined(RT_USING_FAL)
#include "fal.h"
#endif
//#define DRV_DEBUG
#define LOG_TAG "drv.flash"
#include <drv_log.h>
#define ADDR_FLASH_SECTOR_0 ((rt_uint32_t)0x08000000) /* Base address of Sector 0, 32 Kbytes */
#define ADDR_FLASH_SECTOR_1 ((rt_uint32_t)0x08008000) /* Base address of Sector 1, 32 Kbytes */
#define ADDR_FLASH_SECTOR_2 ((rt_uint32_t)0x08010000) /* Base address of Sector 2, 32 Kbytes */
#define ADDR_FLASH_SECTOR_3 ((rt_uint32_t)0x08018000) /* Base address of Sector 3, 32 Kbytes */
#define ADDR_FLASH_SECTOR_4 ((rt_uint32_t)0x08020000) /* Base address of Sector 4, 128 Kbytes */
#define ADDR_FLASH_SECTOR_5 ((rt_uint32_t)0x08040000) /* Base address of Sector 5, 256 Kbytes */
#define ADDR_FLASH_SECTOR_6 ((rt_uint32_t)0x08080000) /* Base address of Sector 6, 256 Kbytes */
#define ADDR_FLASH_SECTOR_7 ((rt_uint32_t)0x080C0000) /* Base address of Sector 7, 256 Kbytes */
#define ADDR_FLASH_SECTOR_8 ((rt_uint32_t)0x08100000) /* Base address of Sector 8, 256 Kbytes */
#define ADDR_FLASH_SECTOR_9 ((rt_uint32_t)0x08140000) /* Base address of Sector 9, 256 Kbytes */
#define ADDR_FLASH_SECTOR_10 ((rt_uint32_t)0x08180000) /* Base address of Sector 10, 256 Kbytes */
#define ADDR_FLASH_SECTOR_11 ((rt_uint32_t)0x081C0000) /* Base address of Sector 11, 256 Kbytes */
/**
* @brief Gets the sector of a given address
* @param None
* @retval The sector of a given address
*/
static rt_uint32_t GetSector(rt_uint32_t Address)
{
uint32_t sector = 0;
#if defined (FLASH_OPTCR_nDBANK)
FLASH_OBProgramInitTypeDef OBInit;
uint32_t nbank = 0;
//get duel bank ability:nDBANK(Bit29)
HAL_FLASHEx_OBGetConfig(&OBInit);
nbank = ((OBInit.USERConfig & 0x20000000U) >> 29);
//1:single bank mode
if (1 == nbank)
{
if ((Address < ADDR_FLASH_SECTOR_1) && (Address >= ADDR_FLASH_SECTOR_0))
{
sector = FLASH_SECTOR_0;
}
else if ((Address < ADDR_FLASH_SECTOR_2) && (Address >= ADDR_FLASH_SECTOR_1))
{
sector = FLASH_SECTOR_1;
}
else if ((Address < ADDR_FLASH_SECTOR_3) && (Address >= ADDR_FLASH_SECTOR_2))
{
sector = FLASH_SECTOR_2;
}
else if ((Address < ADDR_FLASH_SECTOR_4) && (Address >= ADDR_FLASH_SECTOR_3))
{
sector = FLASH_SECTOR_3;
}
else if ((Address < ADDR_FLASH_SECTOR_5) && (Address >= ADDR_FLASH_SECTOR_4))
{
sector = FLASH_SECTOR_4;
}
else if ((Address < ADDR_FLASH_SECTOR_6) && (Address >= ADDR_FLASH_SECTOR_5))
{
sector = FLASH_SECTOR_5;
}
else if ((Address < ADDR_FLASH_SECTOR_7) && (Address >= ADDR_FLASH_SECTOR_6))
{
sector = FLASH_SECTOR_6;
}
else if ((Address < ADDR_FLASH_SECTOR_8) && (Address >= ADDR_FLASH_SECTOR_7))
{
sector = FLASH_SECTOR_7;
}
else if ((Address < ADDR_FLASH_SECTOR_9) && (Address >= ADDR_FLASH_SECTOR_8))
{
sector = FLASH_SECTOR_8;
}
else if ((Address < ADDR_FLASH_SECTOR_10) && (Address >= ADDR_FLASH_SECTOR_9))
{
sector = FLASH_SECTOR_9;
}
else if ((Address < ADDR_FLASH_SECTOR_11) && (Address >= ADDR_FLASH_SECTOR_10))
{
sector = FLASH_SECTOR_10;
}
else
{
sector = FLASH_SECTOR_11;
}
}
else //0:dual bank mode
{
LOG_E("rtthread doesn't support duel bank mode yet!");
RT_ASSERT(0);
}
#else //no dual bank ability
if ((Address < ADDR_FLASH_SECTOR_1) && (Address >= ADDR_FLASH_SECTOR_0))
{
sector = FLASH_SECTOR_0;
}
else if ((Address < ADDR_FLASH_SECTOR_2) && (Address >= ADDR_FLASH_SECTOR_1))
{
sector = FLASH_SECTOR_1;
}
else if ((Address < ADDR_FLASH_SECTOR_3) && (Address >= ADDR_FLASH_SECTOR_2))
{
sector = FLASH_SECTOR_2;
}
else if ((Address < ADDR_FLASH_SECTOR_4) && (Address >= ADDR_FLASH_SECTOR_3))
{
sector = FLASH_SECTOR_3;
}
else if ((Address < ADDR_FLASH_SECTOR_5) && (Address >= ADDR_FLASH_SECTOR_4))
{
sector = FLASH_SECTOR_4;
}
else if ((Address < ADDR_FLASH_SECTOR_6) && (Address >= ADDR_FLASH_SECTOR_5))
{
sector = FLASH_SECTOR_5;
}
else if ((Address < ADDR_FLASH_SECTOR_7) && (Address >= ADDR_FLASH_SECTOR_6))
{
sector = FLASH_SECTOR_6;
}
else if ((Address < ADDR_FLASH_SECTOR_8) && (Address >= ADDR_FLASH_SECTOR_7))
{
sector = FLASH_SECTOR_7;
}
else if ((Address < ADDR_FLASH_SECTOR_9) && (Address >= ADDR_FLASH_SECTOR_8))
{
sector = FLASH_SECTOR_8;
}
else if ((Address < ADDR_FLASH_SECTOR_10) && (Address >= ADDR_FLASH_SECTOR_9))
{
sector = FLASH_SECTOR_9;
}
else if ((Address < ADDR_FLASH_SECTOR_11) && (Address >= ADDR_FLASH_SECTOR_10))
{
sector = FLASH_SECTOR_10;
}
else
{
sector = FLASH_SECTOR_11;
}
#endif
return sector;
}
/**
* Read data from flash.
* @note This operation's units is word.
*
* @param addr flash address
* @param buf buffer to store read data
* @param size read bytes size
*
* @return result
*/
int stm32_flash_read(rt_uint32_t addr, rt_uint8_t *buf, size_t size)
{
size_t i;
if ((addr + size) > STM32_FLASH_END_ADDRESS)
{
LOG_E("read outrange flash size! addr is (0x%p)", (void *)(addr + size));
return -1;
}
for (i = 0; i < size; i++, buf++, addr++)
{
*buf = *(rt_uint8_t *) addr;
}
return size;
}
/**
* Write data to flash.
* @note This operation's units is word.
* @note This operation must after erase. @see flash_erase.
*
* @param addr flash address
* @param buf the write data buffer
* @param size write bytes size
*
* @return result
*/
int stm32_flash_write(rt_uint32_t addr, const rt_uint8_t *buf, size_t size)
{
rt_err_t result = RT_EOK;
rt_uint32_t end_addr = addr + size;
if ((end_addr) > STM32_FLASH_END_ADDRESS)
{
LOG_E("write outrange flash size! addr is (0x%p)", (void *)(addr + size));
return -RT_EINVAL;
}
if (size < 1)
{
return -RT_EINVAL;
}
/* Unlock the Flash to enable the flash control register access */
HAL_FLASH_Unlock();
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR | FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR | FLASH_FLAG_ERSERR);
for (size_t i = 0; i < size; i++, addr++, buf++)
{
/* write data to flash */
if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_BYTE, addr, (rt_uint64_t)(*buf)) == HAL_OK)
{
if (*(rt_uint8_t *)addr != *buf)
{
result = -RT_ERROR;
break;
}
}
else
{
result = -RT_ERROR;
break;
}
}
HAL_FLASH_Lock();
if (result != RT_EOK)
{
return result;
}
return size;
}
/**
* Erase data on flash.
* @note This operation is irreversible.
* @note This operation's units is different which on many chips.
*
* @param addr flash address
* @param size erase bytes size
*
* @return result
*/
int stm32_flash_erase(rt_uint32_t addr, size_t size)
{
rt_err_t result = RT_EOK;
rt_uint32_t FirstSector = 0, NbOfSectors = 0;
rt_uint32_t SECTORError = 0;
if ((addr + size) > STM32_FLASH_END_ADDRESS)
{
LOG_E("ERROR: erase outrange flash size! addr is (0x%p)\n", (void *)(addr + size));
return -RT_EINVAL;
}
/*Variable used for Erase procedure*/
FLASH_EraseInitTypeDef EraseInitStruct;
/* Unlock the Flash to enable the flash control register access */
HAL_FLASH_Unlock();
/* Get the 1st sector to erase */
FirstSector = GetSector(addr);
/* Get the number of sector to erase from 1st sector*/
NbOfSectors = GetSector(addr + size - 1) - FirstSector + 1;
/* Fill EraseInit structure*/
EraseInitStruct.TypeErase = FLASH_TYPEERASE_SECTORS;
EraseInitStruct.VoltageRange = FLASH_VOLTAGE_RANGE_3;
EraseInitStruct.Sector = FirstSector;
EraseInitStruct.NbSectors = NbOfSectors;
if (HAL_FLASHEx_Erase(&EraseInitStruct, &SECTORError) != HAL_OK)
{
result = -RT_ERROR;
goto __exit;
}
__exit:
HAL_FLASH_Lock();
if (result != RT_EOK)
{
return result;
}
LOG_D("erase done: addr (0x%p), size %d", (void *)addr, size);
return size;
}
#if defined(RT_USING_FAL)
#define FLASH_SIZE_GRANULARITY_32K (4 * 32 * 1024)
#define FLASH_SIZE_GRANULARITY_128K (128 * 1024)
#define FLASH_SIZE_GRANULARITY_256K (7 * 256 *1024)
#define STM32_FLASH_START_ADRESS_32K (STM32_FLASH_START_ADRESS)
#define STM32_FLASH_START_ADRESS_128K (STM32_FLASH_START_ADRESS_32K + FLASH_SIZE_GRANULARITY_32K)
#define STM32_FLASH_START_ADRESS_256K (STM32_FLASH_START_ADRESS_128K + FLASH_SIZE_GRANULARITY_128K)
static int fal_flash_read_32k(long offset, rt_uint8_t *buf, size_t size);
static int fal_flash_read_128k(long offset, rt_uint8_t *buf, size_t size);
static int fal_flash_read_256k(long offset, rt_uint8_t *buf, size_t size);
static int fal_flash_write_32k(long offset, const rt_uint8_t *buf, size_t size);
static int fal_flash_write_128k(long offset, const rt_uint8_t *buf, size_t size);
static int fal_flash_write_256k(long offset, const rt_uint8_t *buf, size_t size);
static int fal_flash_erase_32k(long offset, size_t size);
static int fal_flash_erase_128k(long offset, size_t size);
static int fal_flash_erase_256k(long offset, size_t size);
const struct fal_flash_dev stm32_onchip_flash_32k = { "onchip_flash_32k", STM32_FLASH_START_ADRESS_32K, FLASH_SIZE_GRANULARITY_32K, (32 * 1024), {NULL, fal_flash_read_32k, fal_flash_write_32k, fal_flash_erase_32k} };
const struct fal_flash_dev stm32_onchip_flash_128k = { "onchip_flash_128k", STM32_FLASH_START_ADRESS_128K, FLASH_SIZE_GRANULARITY_128K, (128 * 1024), {NULL, fal_flash_read_128k, fal_flash_write_128k, fal_flash_erase_128k} };
const struct fal_flash_dev stm32_onchip_flash_256k = { "onchip_flash_256k", STM32_FLASH_START_ADRESS_256K, FLASH_SIZE_GRANULARITY_256K, (256 * 1024), {NULL, fal_flash_read_256k, fal_flash_write_256k, fal_flash_erase_256k} };
static int fal_flash_read_32k(long offset, rt_uint8_t *buf, size_t size)
{
return stm32_flash_read(stm32_onchip_flash_32k.addr + offset, buf, size);
}
static int fal_flash_read_128k(long offset, rt_uint8_t *buf, size_t size)
{
return stm32_flash_read(stm32_onchip_flash_128k.addr + offset, buf, size);
}
static int fal_flash_read_256k(long offset, rt_uint8_t *buf, size_t size)
{
return stm32_flash_read(stm32_onchip_flash_256k.addr + offset, buf, size);
}
static int fal_flash_write_32k(long offset, const rt_uint8_t *buf, size_t size)
{
return stm32_flash_write(stm32_onchip_flash_32k.addr + offset, buf, size);
}
static int fal_flash_write_128k(long offset, const rt_uint8_t *buf, size_t size)
{
return stm32_flash_write(stm32_onchip_flash_128k.addr + offset, buf, size);
}
static int fal_flash_write_256k(long offset, const rt_uint8_t *buf, size_t size)
{
return stm32_flash_write(stm32_onchip_flash_256k.addr + offset, buf, size);
}
static int fal_flash_erase_32k(long offset, size_t size)
{
return stm32_flash_erase(stm32_onchip_flash_32k.addr + offset, size);
}
static int fal_flash_erase_128k(long offset, size_t size)
{
return stm32_flash_erase(stm32_onchip_flash_128k.addr + offset, size);
}
static int fal_flash_erase_256k(long offset, size_t size)
{
return stm32_flash_erase(stm32_onchip_flash_256k.addr + offset, size);
}
#endif
#endif /* BSP_USING_ON_CHIP_FLASH */

View File

@ -0,0 +1,232 @@
/*
* Copyright (c) 2006-2023, RT-Thread Development Team
*
* SPDX-License-Identifier: Apache-2.0
*
* Change Logs:
* Date Author Notes
* 2020-06-27 NU-LL first version
*/
#include <rtconfig.h>
#include <rtdef.h>
#ifdef BSP_USING_ON_CHIP_FLASH
#include "drv_config.h"
#include "drv_flash.h"
#include <board.h>
#if defined(RT_USING_FAL)
#include "fal.h"
#endif
// #define DRV_DEBUG
#define LOG_TAG "drv.flash"
#include <drv_log.h>
/**
* @brief Gets the page of a given address
* @param Addr: Address of the FLASH Memory
* @retval The page of a given address
*/
static uint32_t GetPage(uint32_t addr)
{
uint32_t page = 0;
page = RT_ALIGN_DOWN(addr-STM32_FLASH_START_ADRESS, FLASH_PAGE_SIZE)/FLASH_PAGE_SIZE;
return page;
}
/**
* Read data from flash.
* @note This operation's units is word.
*
* @param addr flash address
* @param buf buffer to store read data
* @param size read bytes size
*
* @return result
*/
int stm32_flash_read(rt_uint32_t addr, rt_uint8_t *buf, size_t size)
{
size_t i;
if ((addr + size) > STM32_FLASH_END_ADDRESS)
{
LOG_E("read outrange flash size! addr is (0x%p)", (void *)(addr + size));
return -RT_EINVAL;
}
for (i = 0; i < size; i++, buf++, addr++)
{
*buf = *(rt_uint8_t *) addr;
}
return size;
}
/**
* Write data to flash.
* @note This operation's units is word.
* @note This operation must after erase. @see flash_erase.
*
* @param addr flash address
* @param buf the write data buffer
* @param size write bytes size
*
* @return result
*/
int stm32_flash_write(rt_uint32_t addr, const uint8_t *buf, size_t size)
{
size_t i, j;
rt_err_t result = 0;
rt_uint64_t write_data = 0, temp_data = 0;
if ((addr + size) > STM32_FLASH_END_ADDRESS)
{
LOG_E("ERROR: write outrange flash size! addr is (0x%p)\n", (void*)(addr + size));
return -RT_EINVAL;
}
if(addr % 8 != 0)
{
LOG_E("write addr must be 8-byte alignment");
return -RT_EINVAL;
}
HAL_FLASH_Unlock();
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR | FLASH_FLAG_PGAERR | FLASH_FLAG_PGSERR);
if (size < 1)
{
return -RT_ERROR;
}
for (i = 0; i < size;)
{
if ((size - i) < 8)
{
for (j = 0; (size - i) > 0; i++, j++)
{
temp_data = *buf;
write_data = (write_data) | (temp_data << 8 * j);
buf ++;
}
}
else
{
for (j = 0; j < 8; j++, i++)
{
temp_data = *buf;
write_data = (write_data) | (temp_data << 8 * j);
buf ++;
}
}
/* write data */
if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_DOUBLEWORD, addr, write_data) == HAL_OK)
{
/* Check the written value */
if (*(uint64_t*)addr != write_data)
{
LOG_E("ERROR: write data != read data\n");
result = -RT_ERROR;
goto __exit;
}
}
else
{
result = -RT_ERROR;
goto __exit;
}
temp_data = 0;
write_data = 0;
addr += 8;
}
__exit:
HAL_FLASH_Lock();
if (result != 0)
{
return result;
}
return size;
}
/**
* Erase data on flash.
* @note This operation is irreversible.
* @note This operation's units is different which on many chips.
*
* @param addr flash address
* @param size erase bytes size
*
* @return result
*/
int stm32_flash_erase(rt_uint32_t addr, size_t size)
{
rt_err_t result = RT_EOK;
uint32_t PAGEError = 0;
/*Variable used for Erase procedure*/
FLASH_EraseInitTypeDef EraseInitStruct;
if ((addr + size) > STM32_FLASH_END_ADDRESS)
{
LOG_E("ERROR: erase outrange flash size! addr is (0x%p)\n", (void *)(addr + size));
return -RT_EINVAL;
}
HAL_FLASH_Unlock();
/* Fill EraseInit structure*/
EraseInitStruct.TypeErase = FLASH_TYPEERASE_PAGES;
EraseInitStruct.Page = GetPage(addr);
EraseInitStruct.NbPages = (size + FLASH_PAGE_SIZE - 1) / FLASH_PAGE_SIZE;
if (HAL_FLASHEx_Erase(&EraseInitStruct, &PAGEError) != HAL_OK)
{
result = -RT_ERROR;
goto __exit;
}
__exit:
HAL_FLASH_Lock();
if (result != RT_EOK)
{
return result;
}
LOG_D("erase done: addr (0x%p), size %d", (void *)addr, size);
return size;
}
#if defined(RT_USING_FAL)
static int fal_flash_read(long offset, rt_uint8_t *buf, size_t size);
static int fal_flash_write(long offset, const rt_uint8_t *buf, size_t size);
static int fal_flash_erase(long offset, size_t size);
const struct fal_flash_dev stm32_onchip_flash = { "onchip_flash", STM32_FLASH_START_ADRESS, STM32_FLASH_SIZE, FLASH_PAGE_SIZE, {NULL, fal_flash_read, fal_flash_write, fal_flash_erase} };
static int fal_flash_read(long offset, rt_uint8_t *buf, size_t size)
{
return stm32_flash_read(stm32_onchip_flash.addr + offset, buf, size);
}
static int fal_flash_write(long offset, const rt_uint8_t *buf, size_t size)
{
return stm32_flash_write(stm32_onchip_flash.addr + offset, buf, size);
}
static int fal_flash_erase(long offset, size_t size)
{
return stm32_flash_erase(stm32_onchip_flash.addr + offset, size);
}
#endif
#endif /* BSP_USING_ON_CHIP_FLASH */

View File

@ -0,0 +1,263 @@
/*
* Copyright (c) 2006-2023, RT-Thread Development Team
*
* SPDX-License-Identifier: Apache-2.0
*
* Change Logs:
* Date Author Notes
* 2018-12-5 SummerGift first version
* 2019-3-2 jinsheng add Macro judgment
* 2020-1-6 duminmin support single bank mode
* 2020-5-17 yufanyufan77 support support H7
* 2021-3-3 zhuyf233 fix some bugs
*/
#include <rtconfig.h>
#include <rtdef.h>
#ifdef BSP_USING_ON_CHIP_FLASH
#include "drv_config.h"
#include "drv_flash.h"
#include <board.h>
#if defined(RT_USING_FAL)
#include "fal.h"
#endif
//#define DRV_DEBUG
#define LOG_TAG "drv.flash"
#include <drv_log.h>
/**
* Read data from flash.
* @note This operation's units is word.
*
* @param addr flash address
* @param buf buffer to store read data
* @param size read bytes size
*
* @retval The length of bytes that have been read
*/
int stm32_flash_read(rt_uint32_t addr, rt_uint8_t *buf, size_t size)
{
size_t i;
if ((addr + size - 1) > FLASH_END)
{
LOG_E("read outrange flash size! addr is (0x%p)", (void *)(addr + size));
return -RT_ERROR;
}
for (i = 0; i < size; i++, buf++, addr++)
{
*buf = *(rt_uint8_t *) addr;
}
return size;
}
/**
* Write data to flash.
* @note This operation's units is word.
* @note This operation must after erase. @see flash_erase.
*
* @param addr flash address
* @param buf the write data buffer
* @param size write bytes size
*
* @return The length of bytes that have been written
*/
int stm32_flash_write(rt_uint32_t addr, const rt_uint8_t *buf, size_t size)
{
rt_err_t result = RT_EOK;
rt_uint32_t end_addr = addr + size - 1, write_addr;
rt_uint32_t write_granularity = FLASH_NB_32BITWORD_IN_FLASHWORD * 4;
rt_uint32_t write_size = write_granularity;
rt_uint8_t write_buffer[32] = {0};
if ((end_addr) > FLASH_END)
{
LOG_E("write outrange flash size! addr is (0x%p)", (void *)(addr + size));
return -RT_EINVAL;
}
if(addr % 32 != 0)
{
LOG_E("write addr must be 32-byte alignment");
return -RT_EINVAL;
}
if (size < 1)
{
return -RT_EINVAL;
}
HAL_FLASH_Unlock();
write_addr = (uint32_t)buf;
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR);
while (addr < end_addr)
{
if(end_addr - addr + 1 < write_granularity)
{
write_size = end_addr - addr + 1;
for(size_t i = 0; i < write_size; i++)
{
write_buffer[i] = *((uint8_t *)(write_addr + i));
}
write_addr = (uint32_t)((rt_uint32_t *)write_buffer);
}
if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_FLASHWORD, addr, write_addr) == HAL_OK)
{
for(rt_uint8_t i = 0; i < write_size; i++)
{
if (*(rt_uint8_t *)(addr + i) != *(rt_uint8_t *)(write_addr + i))
{
result = -RT_ERROR;
goto __exit;
}
}
addr += write_granularity;
write_addr += write_granularity;
}
else
{
result = -RT_ERROR;
goto __exit;
}
}
__exit:
HAL_FLASH_Lock();
if (result != RT_EOK)
{
return result;
}
return size;
}
/**
* Erase data on flash.
* @note This operation is irreversible.
* @note This operation's units is different which on many chips.
*
* @param addr flash address
* @param size erase bytes size
*
* @return result
*/
int stm32_flash_erase(rt_uint32_t addr, size_t size)
{
rt_err_t result = RT_EOK;
rt_uint32_t SECTORError = 0;
if ((addr + size - 1) > FLASH_END)
{
LOG_E("ERROR: erase outrange flash size! addr is (0x%p)\n", (void *)(addr + size));
return -RT_EINVAL;
}
rt_uint32_t addr_bank1 = 0;
rt_uint32_t size_bank1 = 0;
#ifdef FLASH_BANK_2
rt_uint32_t addr_bank2 = 0;
rt_uint32_t size_bank2 = 0;
#endif
if((addr + size) < FLASH_BANK2_BASE)
{
addr_bank1 = addr;
size_bank1 = size;
#ifdef FLASH_BANK_2
size_bank2 = 0;
#endif
}
else if(addr >= FLASH_BANK2_BASE)
{
size_bank1 = 0;
#ifdef FLASH_BANK_2
addr_bank2 = addr;
size_bank2 = size;
#endif
}
else
{
addr_bank1 = addr;
size_bank1 = FLASH_BANK2_BASE - addr_bank1;
#ifdef FLASH_BANK_2
addr_bank2 = FLASH_BANK2_BASE;
size_bank2 = addr + size - FLASH_BANK2_BASE;
#endif
}
/*Variable used for Erase procedure*/
FLASH_EraseInitTypeDef EraseInitStruct;
/* Unlock the Flash to enable the flash control register access */
HAL_FLASH_Unlock();
EraseInitStruct.TypeErase = FLASH_TYPEERASE_SECTORS;
EraseInitStruct.VoltageRange = FLASH_VOLTAGE_RANGE_3;
SCB_DisableDCache();
if(size_bank1)
{
EraseInitStruct.Sector = (addr_bank1 - FLASH_BANK1_BASE) / FLASH_SECTOR_SIZE;
EraseInitStruct.NbSectors = (addr_bank1 + size_bank1 -1 - FLASH_BANK1_BASE) / FLASH_SECTOR_SIZE - EraseInitStruct.Sector + 1;
EraseInitStruct.Banks = FLASH_BANK_1;
if (HAL_FLASHEx_Erase(&EraseInitStruct, &SECTORError) != HAL_OK)
{
result = -RT_ERROR;
goto __exit;
}
}
#ifdef FLASH_BANK_2
if(size_bank2)
{
EraseInitStruct.Sector = (addr_bank2 - FLASH_BANK2_BASE) / FLASH_SECTOR_SIZE;
EraseInitStruct.NbSectors = (addr_bank2 + size_bank2 -1 - FLASH_BANK2_BASE) / FLASH_SECTOR_SIZE - EraseInitStruct.Sector + 1;
EraseInitStruct.Banks = FLASH_BANK_2;
if (HAL_FLASHEx_Erase(&EraseInitStruct, &SECTORError) != HAL_OK)
{
result = -RT_ERROR;
goto __exit;
}
}
#endif
__exit:
SCB_EnableDCache();
HAL_FLASH_Lock();
if (result != RT_EOK)
{
return result;
}
LOG_D("erase done: addr (0x%p), size %d", (void *)addr, size);
return size;
}
#if defined(RT_USING_FAL)
static int fal_flash_read_128k(long offset, rt_uint8_t *buf, size_t size);
static int fal_flash_write_128k(long offset, const rt_uint8_t *buf, size_t size);
static int fal_flash_erase_128k(long offset, size_t size);
const struct fal_flash_dev stm32_onchip_flash_128k = { "onchip_flash_128k", STM32_FLASH_START_ADRESS, FLASH_SIZE_GRANULARITY_128K, (128 * 1024), {NULL, fal_flash_read_128k, fal_flash_write_128k, fal_flash_erase_128k} };
static int fal_flash_read_128k(long offset, rt_uint8_t *buf, size_t size)
{
return stm32_flash_read(stm32_onchip_flash_128k.addr + offset, buf, size);
}
static int fal_flash_write_128k(long offset, const rt_uint8_t *buf, size_t size)
{
return stm32_flash_write(stm32_onchip_flash_128k.addr + offset, buf, size);
}
static int fal_flash_erase_128k(long offset, size_t size)
{
return stm32_flash_erase(stm32_onchip_flash_128k.addr + offset, size);
}
#endif
#endif /* BSP_USING_ON_CHIP_FLASH */

View File

@ -0,0 +1,188 @@
/*
* Copyright (c) 2024, chasel
*
* SPDX-License-Identifier: Apache-2.0
*
* Change Logs:
* Date Author Notes
* 2024-6-21 chasel first version
*/
#include <board.h>
#include <rtconfig.h>
#include <rtdef.h>
#ifdef BSP_USING_ON_CHIP_FLASH
#include "drv_config.h"
#include "drv_flash.h"
#if defined(RT_USING_FAL)
#include "fal.h"
#endif
#define DRV_DEBUG
#define LOG_TAG "drv.flash"
#include <drv_log.h>
/**
* Read data from flash.
* @note This operation's units is word.
*
* @param addr flash address
* @param buf buffer to store read data
* @param size read bytes size
*
* @return result
*/
int stm32_flash_read(rt_uint32_t addr, rt_uint8_t *buf, size_t size)
{
size_t i;
if ((addr + size) > STM32_FLASH_END_ADDRESS)
{
LOG_E("read outrange flash size! addr is (0x%p)", (void* )(addr + size));
return -RT_EINVAL;
}
for (i = 0; i < size; i++, buf++, addr++)
{
*buf = *(rt_uint8_t *) addr;
}
return size;
}
/**
* Write data to flash.
* @note This operation's units is word.
* @note This operation must after erase. @see flash_erase.
*
* @param addr flash address
* @param buf the write data buffer
* @param size write bytes size
*
* @return result
*/
int stm32_flash_write(rt_uint32_t addr, const uint8_t *buf, size_t size)
{
rt_err_t result = RT_EOK;
rt_uint32_t end_addr = addr + size;
if (addr % 4 != 0)
{
LOG_E("write addr must be 4-byte alignment");
return -RT_EINVAL;
}
if ((end_addr) > STM32_FLASH_END_ADDRESS)
{
LOG_E("write outrange flash size! addr is (0x%p)", (void * )(addr + size));
return -RT_EINVAL;
}
HAL_FLASH_Unlock();
while (addr < end_addr)
{
if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_WORD, addr, *((rt_uint32_t *) buf)) == HAL_OK)
{
if (*(rt_uint32_t *) addr != *(rt_uint32_t *) buf)
{
result = -RT_ERROR;
break;
}
addr += 4;
buf += 4;
}
else
{
result = -RT_ERROR;
break;
}
}
HAL_FLASH_Lock();
if (result != RT_EOK)
{
return result;
}
return size;
}
/**
* Erase data on flash.
* @note This operation is irreversible.
* @note This operation's units is different which on many chips.
*
* @param addr flash address
* @param size erase bytes size
*
* @return result
*/
int stm32_flash_erase(rt_uint32_t addr, size_t size)
{
rt_err_t result = RT_EOK;
uint32_t PAGEError = 0;
/*Variable used for Erase procedure*/
FLASH_EraseInitTypeDef EraseInitStruct;
if ((addr + size) > STM32_FLASH_END_ADDRESS)
{
LOG_E("ERROR: erase outrange flash size! addr is (0x%p)\n", (void * )(addr + size));
return -RT_EINVAL;
}
HAL_FLASH_Unlock();
/* Fill EraseInit structure*/
EraseInitStruct.TypeErase = FLASH_TYPEERASE_PAGES;
EraseInitStruct.PageAddress = addr;
EraseInitStruct.NbPages = (size + FLASH_PAGE_SIZE - 1) / FLASH_PAGE_SIZE;
if (HAL_FLASHEx_Erase(&EraseInitStruct, &PAGEError) != HAL_OK)
{
result = -RT_ERROR;
goto __exit;
}
__exit: HAL_FLASH_Lock();
if (result != RT_EOK)
{
return result;
}
LOG_D("erase done: addr (0x%p), size %d", (void* )addr, size);
return size;
}
#if defined(RT_USING_FAL)
static int fal_flash_read(long offset, rt_uint8_t *buf, size_t size);
static int fal_flash_write(long offset, const rt_uint8_t *buf, size_t size);
static int fal_flash_erase(long offset, size_t size);
const struct fal_flash_dev stm32_onchip_flash = { "onchip_flash", STM32_FLASH_START_ADRESS, STM32_FLASH_SIZE,
FLASH_PAGE_SIZE, { NULL, fal_flash_read, fal_flash_write, fal_flash_erase } };
static int fal_flash_read(long offset, rt_uint8_t *buf, size_t size)
{
return stm32_flash_read(stm32_onchip_flash.addr + offset, buf, size);
}
static int fal_flash_write(long offset, const rt_uint8_t *buf, size_t size)
{
return stm32_flash_write(stm32_onchip_flash.addr + offset, buf, size);
}
static int fal_flash_erase(long offset, size_t size)
{
return stm32_flash_erase(stm32_onchip_flash.addr + offset, size);
}
#endif
#endif /* BSP_USING_ON_CHIP_FLASH */

View File

@ -0,0 +1,293 @@
/*
* Copyright (c) 2006-2023, RT-Thread Development Team
*
* SPDX-License-Identifier: Apache-2.0
*
* Change Logs:
* Date Author Notes
* 2018-12-5 SummerGift first version
*/
#include <rtconfig.h>
#include <rtdef.h>
#ifdef BSP_USING_ON_CHIP_FLASH
#include "drv_config.h"
#include "drv_flash.h"
#include <board.h>
#if defined(RT_USING_FAL)
#include "fal.h"
#endif
//#define DRV_DEBUG
#define LOG_TAG "drv.flash"
#include <drv_log.h>
/**
* @brief Gets the page of a given address
* @param Addr: Address of the FLASH Memory
* @retval The page of a given address
*/
static uint32_t GetPage(uint32_t Addr)
{
uint32_t page = 0;
if (Addr < (FLASH_BASE + FLASH_BANK_SIZE))
{
/* Bank 1 */
page = (Addr - FLASH_BASE) / FLASH_PAGE_SIZE;
}
else
{
/* Bank 2 */
page = (Addr - (FLASH_BASE + FLASH_BANK_SIZE)) / FLASH_PAGE_SIZE;
}
return page;
}
/**
* @brief Gets the bank of a given address
* @param Addr: Address of the FLASH Memory
* @retval The bank of a given address
*/
static uint32_t GetBank(uint32_t Addr)
{
uint32_t bank = 0;
#ifndef FLASH_BANK_2
bank = FLASH_BANK_1;
#else
if (READ_BIT(SYSCFG->MEMRMP, SYSCFG_MEMRMP_FB_MODE) == 0)
{
/* No Bank swap */
if (Addr < (FLASH_BASE + FLASH_BANK_SIZE))
{
bank = FLASH_BANK_1;
}
else
{
bank = FLASH_BANK_2;
}
}
else
{
/* Bank swap */
if (Addr < (FLASH_BASE + FLASH_BANK_SIZE))
{
bank = FLASH_BANK_2;
}
else
{
bank = FLASH_BANK_1;
}
}
#endif
return bank;
}
/**
* Read data from flash.
* @note This operation's units is word.
*
* @param addr flash address
* @param buf buffer to store read data
* @param size read bytes size
*
* @return result
*/
int stm32_flash_read(rt_uint32_t addr, rt_uint8_t *buf, size_t size)
{
size_t i;
if ((addr + size) > STM32_FLASH_END_ADDRESS)
{
LOG_E("read outrange flash size! addr is (0x%p)", (void*)(addr + size));
return -RT_EINVAL;
}
for (i = 0; i < size; i++, buf++, addr++)
{
*buf = *(rt_uint8_t *) addr;
}
return size;
}
/**
* Write data to flash.
* @note This operation's units is word.
* @note This operation must after erase. @see flash_erase.
*
* @param addr flash address
* @param buf the write data buffer
* @param size write bytes size
*
* @return result
*/
int stm32_flash_write(rt_uint32_t addr, const uint8_t *buf, size_t size)
{
size_t i, j;
rt_err_t result = 0;
rt_uint64_t write_data = 0, temp_data = 0;
if ((addr + size) > STM32_FLASH_END_ADDRESS)
{
LOG_E("ERROR: write outrange flash size! addr is (0x%p)\n", (void*)(addr + size));
return -RT_EINVAL;
}
if(addr % 8 != 0)
{
LOG_E("write addr must be 8-byte alignment");
return -RT_EINVAL;
}
HAL_FLASH_Unlock();
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR | FLASH_FLAG_PGAERR | FLASH_FLAG_PGSERR);
if (size < 1)
{
return -RT_ERROR;
}
for (i = 0; i < size;)
{
if ((size - i) < 8)
{
for (j = 0; (size - i) > 0; i++, j++)
{
temp_data = *buf;
write_data = (write_data) | (temp_data << 8 * j);
buf ++;
}
}
else
{
for (j = 0; j < 8; j++, i++)
{
temp_data = *buf;
write_data = (write_data) | (temp_data << 8 * j);
buf ++;
}
}
/* write data */
if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_DOUBLEWORD, addr, write_data) == HAL_OK)
{
/* Check the written value */
if (*(uint64_t*)addr != write_data)
{
LOG_E("ERROR: write data != read data\n");
result = -RT_ERROR;
goto __exit;
}
}
else
{
result = -RT_ERROR;
goto __exit;
}
temp_data = 0;
write_data = 0;
addr += 8;
}
__exit:
HAL_FLASH_Lock();
if (result != 0)
{
return result;
}
return size;
}
/**
* Erase data on flash.
* @note This operation is irreversible.
* @note This operation's units is different which on many chips.
*
* @param addr flash address
* @param size erase bytes size
*
* @return result
*/
int stm32_flash_erase(rt_uint32_t addr, size_t size)
{
rt_err_t result = RT_EOK;
uint32_t FirstPage = 0, NbOfPages = 0, BankNumber = 0;
uint32_t PAGEError = 0;
if ((addr + size) > STM32_FLASH_END_ADDRESS)
{
LOG_E("ERROR: erase outrange flash size! addr is (0x%p)\n", (void*)(addr + size));
return -RT_EINVAL;
}
/*Variable used for Erase procedure*/
FLASH_EraseInitTypeDef EraseInitStruct;
/* Unlock the Flash to enable the flash control register access *************/
HAL_FLASH_Unlock();
/* Clear OPTVERR bit set on virgin samples */
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_OPTVERR | FLASH_FLAG_PGSERR);
/* Get the 1st page to erase */
FirstPage = GetPage(addr);
/* Get the number of pages to erase from 1st page */
NbOfPages = GetPage(addr + size - 1) - FirstPage + 1;
/* Get the bank */
BankNumber = GetBank(addr);
/* Fill EraseInit structure*/
EraseInitStruct.TypeErase = FLASH_TYPEERASE_PAGES;
EraseInitStruct.Banks = BankNumber;
EraseInitStruct.Page = FirstPage;
EraseInitStruct.NbPages = NbOfPages;
if (HAL_FLASHEx_Erase(&EraseInitStruct, &PAGEError) != HAL_OK)
{
result = -RT_ERROR;
goto __exit;
}
__exit:
HAL_FLASH_Lock();
if (result != RT_EOK)
{
return result;
}
LOG_D("erase done: addr (0x%p), size %d", (void*)addr, size);
return size;
}
#if defined(RT_USING_FAL)
static int fal_flash_read(long offset, rt_uint8_t *buf, size_t size);
static int fal_flash_write(long offset, const rt_uint8_t *buf, size_t size);
static int fal_flash_erase(long offset, size_t size);
const struct fal_flash_dev stm32_onchip_flash = { "onchip_flash", STM32_FLASH_START_ADRESS, STM32_FLASH_SIZE, FLASH_PAGE_SIZE, {NULL, fal_flash_read, fal_flash_write, fal_flash_erase} };
static int fal_flash_read(long offset, rt_uint8_t *buf, size_t size)
{
return stm32_flash_read(stm32_onchip_flash.addr + offset, buf, size);
}
static int fal_flash_write(long offset, const rt_uint8_t *buf, size_t size)
{
return stm32_flash_write(stm32_onchip_flash.addr + offset, buf, size);
}
static int fal_flash_erase(long offset, size_t size)
{
return stm32_flash_erase(stm32_onchip_flash.addr + offset, size);
}
#endif
#endif /* BSP_USING_ON_CHIP_FLASH */

View File

@ -0,0 +1,233 @@
/*
* Copyright (c) 2006-2023, RT-Thread Development Team
*
* SPDX-License-Identifier: Apache-2.0
*
* Change Logs:
* Date Author Notes
* 2020-10-14 Dozingfiretruck first version
*/
#include <rtconfig.h>
#include <rtdef.h>
#ifdef BSP_USING_ON_CHIP_FLASH
#include "drv_config.h"
#include "drv_flash.h"
#include <board.h>
#if defined(RT_USING_FAL)
#include "fal.h"
#endif
//#define DRV_DEBUG
#define LOG_TAG "drv.flash"
#include <drv_log.h>
/**
* @brief Gets the page of a given address
* @param Addr: Address of the FLASH Memory
* @retval The page of a given address
*/
static uint32_t GetPage(uint32_t addr)
{
uint32_t page = 0;
page = RT_ALIGN_DOWN(addr-STM32_FLASH_START_ADRESS, FLASH_PAGE_SIZE)/FLASH_PAGE_SIZE;
return page;
}
/**
* Read data from flash.
* @note This operation's units is word.
*
* @param addr flash address
* @param buf buffer to store read data
* @param size read bytes size
*
* @return result
*/
int stm32_flash_read(rt_uint32_t addr, rt_uint8_t *buf, size_t size)
{
size_t i;
if ((addr + size) > STM32_FLASH_END_ADDRESS)
{
LOG_E("read outrange flash size! addr is (0x%p)", (void*)(addr + size));
return -RT_EINVAL;
}
for (i = 0; i < size; i++, buf++, addr++)
{
*buf = *(rt_uint8_t *) addr;
}
return size;
}
/**
* Write data to flash.
* @note This operation's units is word.
* @note This operation must after erase. @see flash_erase.
*
* @param addr flash address
* @param buf the write data buffer
* @param size write bytes size
*
* @return result
*/
int stm32_flash_write(rt_uint32_t addr, const uint8_t *buf, size_t size)
{
size_t i, j;
rt_err_t result = 0;
rt_uint64_t write_data = 0, temp_data = 0;
if ((addr + size) > STM32_FLASH_END_ADDRESS)
{
LOG_E("ERROR: write outrange flash size! addr is (0x%p)\n", (void*)(addr + size));
return -RT_EINVAL;
}
if(addr % 8 != 0)
{
LOG_E("write addr must be 8-byte alignment");
return -RT_EINVAL;
}
HAL_FLASH_Unlock();
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR | FLASH_FLAG_PGAERR | FLASH_FLAG_PGSERR);
if (size < 1)
{
return -RT_ERROR;
}
for (i = 0; i < size;)
{
if ((size - i) < 8)
{
for (j = 0; (size - i) > 0; i++, j++)
{
temp_data = *buf;
write_data = (write_data) | (temp_data << 8 * j);
buf ++;
}
}
else
{
for (j = 0; j < 8; j++, i++)
{
temp_data = *buf;
write_data = (write_data) | (temp_data << 8 * j);
buf ++;
}
}
/* write data */
if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_DOUBLEWORD, addr, write_data) == HAL_OK)
{
/* Check the written value */
if (*(uint64_t*)addr != write_data)
{
LOG_E("ERROR: write data != read data\n");
result = -RT_ERROR;
goto __exit;
}
}
else
{
result = -RT_ERROR;
goto __exit;
}
temp_data = 0;
write_data = 0;
addr += 8;
}
__exit:
HAL_FLASH_Lock();
if (result != 0)
{
return result;
}
return size;
}
/**
* Erase data on flash.
* @note This operation is irreversible.
* @note This operation's units is different which on many chips.
*
* @param addr flash address
* @param size erase bytes size
*
* @return result
*/
int stm32_flash_erase(rt_uint32_t addr, size_t size)
{
rt_err_t result = RT_EOK;
uint32_t PAGEError = 0;
/*Variable used for Erase procedure*/
FLASH_EraseInitTypeDef EraseInitStruct;
if ((addr + size) > STM32_FLASH_END_ADDRESS)
{
LOG_E("ERROR: erase outrange flash size! addr is (0x%p)\n", (void *)(addr + size));
return -RT_EINVAL;
}
HAL_FLASH_Unlock();
/* Fill EraseInit structure*/
EraseInitStruct.TypeErase = FLASH_TYPEERASE_PAGES;
EraseInitStruct.Page = GetPage(addr);
EraseInitStruct.NbPages = (size + FLASH_PAGE_SIZE - 1) / FLASH_PAGE_SIZE;
if (HAL_FLASHEx_Erase(&EraseInitStruct, &PAGEError) != HAL_OK)
{
result = -RT_ERROR;
goto __exit;
}
__exit:
HAL_FLASH_Lock();
if (result != RT_EOK)
{
return result;
}
LOG_D("erase done: addr (0x%p), size %d", (void*)addr, size);
return size;
}
#if defined(RT_USING_FAL)
static int fal_flash_read(long offset, rt_uint8_t *buf, size_t size);
static int fal_flash_write(long offset, const rt_uint8_t *buf, size_t size);
static int fal_flash_erase(long offset, size_t size);
const struct fal_flash_dev stm32_onchip_flash = { "onchip_flash", STM32_FLASH_START_ADRESS, STM32_FLASH_SIZE, FLASH_PAGE_SIZE, {NULL, fal_flash_read, fal_flash_write, fal_flash_erase} };
static int fal_flash_read(long offset, rt_uint8_t *buf, size_t size)
{
return stm32_flash_read(stm32_onchip_flash.addr + offset, buf, size);
}
static int fal_flash_write(long offset, const rt_uint8_t *buf, size_t size)
{
return stm32_flash_write(stm32_onchip_flash.addr + offset, buf, size);
}
static int fal_flash_erase(long offset, size_t size)
{
return stm32_flash_erase(stm32_onchip_flash.addr + offset, size);
}
#endif
#endif /* BSP_USING_ON_CHIP_FLASH */